Gallium nitride (GaN)-based high electron mobility transistors (HEMTs) are a type of field-effect transistors (FETs) designed to operate at very high frequencies with low noise. As such, they have ...
Thin films play a crucial role in the fabrication of several components and devices, such as protective coatings, integrated circuits, solar cells, and optical ...
Results that may be inaccessible to you are currently showing.
Hide inaccessible results
Feedback