A technical paper titled “Logic-in-Memory Operation of Ternary NAND/NOR Universal Logic Gates using Double-Gated Feedback Field-Effect Transistors” was published by researchers at Korea University.
Duke engineers show how a common device architecture used to test 2D transistors overstates their performance prospects in real-world devices.
A joint research team led by Professors Donghee Son and Jin-Hong Park at SKKU has developed a stretchable, self-healing, and reconfigurable electronic circuit platform that can autonomously recover ...
(Santa Barbara, Calif.) — For decades, field-effect transistors enabled by silicon-based semiconductors have powered the electronics revolution. But in recent years, manufacturers have come up against ...
The previous article examined the concept of logic gates. They can be made from discrete and active electronic components, although today logic gates are available within integrated circuits. In this ...
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